Probing the nature of defects in graphene by Raman spectroscopy.

نویسندگان

  • Axel Eckmann
  • Alexandre Felten
  • Artem Mishchenko
  • Liam Britnell
  • Ralph Krupke
  • Kostya S Novoselov
  • Cinzia Casiraghi
چکیده

Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (∼13) for sp(3)-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.

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عنوان ژورنال:
  • Nano letters

دوره 12 8  شماره 

صفحات  -

تاریخ انتشار 2012